3 edition of **Hopping conduction in quasi-one-dimensional disordered compounds** found in the catalog.

Hopping conduction in quasi-one-dimensional disordered compounds

Vinod K. S. Shante

- 96 Want to read
- 35 Currently reading

Published
**1992**
.

Written in English

**Edition Notes**

Statement | by Vinod K.S. Shante. |

Classifications | |
---|---|

LC Classifications | Microfilm 92/500 (Q) |

The Physical Object | |

Format | Microform |

Pagination | p. 2597-2612 |

Number of Pages | 2612 |

ID Numbers | |

Open Library | OL1388117M |

LC Control Number | 92955246 |

where I 0, α, β, γ are the fitting parameters, k B is the Boltzmann constant, e is the electron charge, and Γ(x) is the gamma function 6,7,13,14,15,The expression . Many characteristics of charge transport in disordered materials differ markedly from those in perfect crystalline systems. The term disordered materials usually refers to noncrystalline solid materials without perfect order in the spatial arrangement of atoms. One should distinguish between disordered materials with ionic conduction and those with electronic conduction.

Accordingly, the conduction mechanism is modified from the 3-dimensional variable range hopping (3D VRH) model to the 2-dimensional weak localization (2D WL) model. Results show that carrier–carrier and carrier–phonon interactions play major roles in developing the weak localization behavior with the extent of graphitization. 9. Scattering and interference effects in variable range hopping conduction (B.I. Shklovskii and B.Z. Spivak). Hopping conduction in III-V compounds (R. Mansfield). Hopping conduction in electrically conducting polymers (S. Roth). Hopping conduction in heavily doped semiconductors (A.N. Ionov and I.S. Shlimak). Author index. Subject.

Variable-range-hopping-like transverse conductivity of the quasi one-dimensional conductor TaS{3} Article (PDF Available) in Journal de Physique IV (Proceedings) . (). Temperature- and field-dependence of hopping conduction in disordered systems, II. The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics: Vol. 31, No. 6, pp.

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Book chapter Full text access CHAPTER 6 - Slow Processes in Disordered Solids. POLLAK, A. HUNT. Pages Hopping Conduction in III–V Compounds. MANSFIELD. Pages Download PDF; select article CHAPTER 11 - Hopping Conduction in Electrically Conducting Polymers.

Using a percolation construction we evaluate the temperature dependence of the phonon-assisted dc hopping conductivity of a model appropriate to a class of anisotropic quasi-one-dimensional conductors in which the electronic states in the vicinity of the Fermi level are localized because of intrinsic and or extrinsic static disorder.

We find temperature Cited by: The hopping process, which differs substantially from conventional transport processes in crystals, is the central process in the transport phenomena discussed in this book. Throughout the book the term ``hopping'' is defined as the inelastic tunneling transfer of an electron between two localized electronic states centered at different Edition: 1.

Georgios P. Triberis National and Kapodistrian University of Athens, Physics Department, Solid State Section, Athens, Greece. Series: Materials Science and Technologies BISAC: TEC Introducing the Generalized Molecular Crystal Model, as a more realistic model for the study of the small polaron transport in disordered materials, in the book the “microscopic” kinetics of.

We report systematic studies of a new quasi-one-dimensional (quasi-1D) compound, Ba3TiTe5, and the high-pressure induced superconductivity therein. Ba3TiTe5 was synthesized at high pressure and Cited by: 1.

For the d.c. conduction, the charge carrier has to overcome the largest barrier for hopping to another site while for the a.c. conduction, the charge carrier hops over relatively lower barriers and hence the charge carrier travels a very limited distance.

The hopping models, in general, assume that the charge carrier jump probabilities are time. For the latter compound conduction on both chains was found to be diffusive on the grounds that: (I) the mean free path calculated from a, is much less than the lattice spacing; (2) instead of a small Q varying linearly with T, as is generally observed for the compounds in this family, Q for TMTTF-DMTCNQ has a high constant value of.

V/K. The conduction mechanism has been described through hopping model: small polaron hopping (SPH) above K ( K) and variable range hopping (VRH) below 40 K (56 K) for H = 0T (for 10T).

A parallel combination of SPH and VRH has been considered to depict ρ(T) between 40 K compound. The critical path theory of Katz and Thompson [Phys. Rev. B 34, ()] is extended to estimate the permeability of strongly disordered macroscopic porous media. The theory is based on percolation concepts and for lognormal distributions predicts an asymptotic exponential dependence on the standard deviation.

The concept of hopping transport has been familiar for a long time in connection with ionic conduction, since ions move essentially by hopping, whether through interstices or vacancies. This concept has been extended to electrons, particularly for electronic conduction in amorphous and disordered nonmetallic solids.

4, Basic Elements of the Theory of Hopping Transport Small Polarons Hopping Conduction in Disordered Systems Classical Hopping Transport Recent Developments Appendix 1. Diagram Technique for Strong Electron-Phonon Coupling Appendix 2. Rate Equation in the Presence of a Magnetic Field Appendix 3.

Percolation Problems and the Potts Model References. This chapter is concerned with the basic experimental facts related to hopping conduction, and the simplest models used in their interpretation. Section describes the range of temperatures and degrees of compensation for which electrical conduction in semiconductors occurs by the hopping mechanism.

Abstract. A brief review is given of recent progress in several areas of the theory of quasi-one-dimensional materials: Shanie's theory of hopping conduction in highly anistropic materials; Theodorou's study of the disordered, one-dimensional Hubbard model with application to NMP-TCNQ; the electron-phonon interaction as dynamic disorder; spin and charge ordering in.

Crossover from temperature-dependent to field-dependent variable-range hopping conduction in partially disordered graphene Conduction in single-wall carbon nanotube networks: further evidence for our crossover model Outlook References APPENDIX.

Publications, presentations and publicity B. Movaghar, G. Sauer: Theory of hopping conduction in disordered systems: Application to the magnetoresistance in impurity conduction. Solid State Commun. 35, () ADS CrossRef Google Scholar. Hopping conduction in quasi-one-dimensional disordered compounds Careful consideration of the hopping conductivity in "one-dimensional" disordered compounds revels that there is a low.

Hopping conduction in quasi-one-dimensional disordered compounds. The book deals with various physical phenomena occurring in doped semiconductors in.

An older account is given by Pollak (). We discuss the Miller-Abrahams resistor network, then the application of percolation to predicting the hopping conductivity of disordered solids.

This utilizes a modification of the Miller-Abrahams network model. We also discuss recent studies of fractal structure and hopping conductivity. General properties. In molecular crystals the energetic separation between the top of the valence band and the bottom conduction band, i.e.

the band gap, is typically –4 eV, while in inorganic semiconductors the band gaps are typically 1–2 eV. This implies that they are, in fact, insulators rather than semiconductors in the conventional sense.

Disorder localizes electrons, which is usually detrimental to the onset of superconductivity. Here, Petrović et al. report a disorder-enhanced superconducting instability in quasi-one dimensional. in our compounds at all temperatures up to room temperature provides an excel-lent tool to examine the mechanism of hopping conduction, and in particular the variable range hopping conduction.

INTRODUCTION 83 Outline In Mott introduced the concept of a type of hopping conduction called vari.Role of interchain hopping on electron spin relaxation in quasi-one-dimensional case. this term is dominant at low temperatures and for the highest disordered compounds. One .Disordered conduction in single-crystalline dimer Mott compounds constant was also present in a quasi-one-dimensional dimer Mott insulator hopping of a charge between neighboring sites can be seen as the rotation of a permanent dipole However, this is unlikely.